GaN Systems’ GS61004B GaN HEMT Complete Teardown Report 2018 with Comparison of Standard 100V Si MOSFETs and Low-Voltage GaN on Si HEMT

There are only two main players in low-voltage GaN: EPC and GaN Systems, a fact mainly due to the complexity of using a standard package with low losses. GaN Systems wants to compete with EPC, the market leader, in the low-voltage HEMT market. System Plus Consulting unveils the GS61004B from GaN Systems, the latest device driving 100V and optimized for AC-DC converters and high-frequency, high-efficiency power conversion.











The GS61004B from GaN Systems is a GaN-on-silicon HEMT transistor packaged in the GaNpx embedded die package. This embedded die package is unique to the market in that it allows for high current capability. The GS61004B has a die size of around 4 mm2 and carries up to 45A, which means more than 10A/mm2, almost 3x higher than the competition.











The GS61004B is packaged in an innovative embedded die package developed by AT&S (ECP process). This package has no wire bonding, which reduces inductance, and its design increases heat management. The die’s new position in the package facilitates enhanced thermal dissipation, and a simplification of the process reduces manufacturing time and cost.













Based on a complete teardown analysis, this report also provides an estimated production cost for the epitaxy and the package. Moreover, this report compares standard 100V Si MOSFETs and low-voltage GaN on Si HEMT.













Key Topics Covered:













1. Overview / Introduction













  • Executive Summary
  • Reverse Costing Methodology

2. Company Profile













  • GaN Systems
  • Products

3. Physical Analysis













  • Summary of the Physical Analysis
  • Package Analysis













  • Package opening
  • Package cross-section
  • HEMT Die













  • HEMT die view and dimensions
  • HEMT die process
  • HEMT die cross-section
  • HEMT die process characteristics

4. Transistor Manufacturing Process













  • HEMT Die Front-End Process
  • HEMT Die Fabrication Unit
  • Final Test and Packaging Fabrication Unit

5. Cost Analysis













  • Cost Analysis – Summary
  • Yields Explanation and Hypotheses
  • HEMT Die













  • HEMT front-end cost
  • HEMT die probe test, thinning and dicing
  • HEMT wafer cost
  • HEMT die cost
  • Complete Device













  • Packaging cost
  • Final test cost

6. Price Analysis













  • Estimated Sales Price

7. Comparison













  • Comparison of GaN Systems’ Devices
  • Comparison of GaN Systems and EPC 100V HEMT
  • Comparison between 100V GaN-on-Si and Si MOSFET

Companies Mentioned













  • EPC
  • GaN Systems
  • Panasocnic
  • TI
  • Transphorm

For more information about this report visit https://www.researchandmarkets.com/research/t7mrt9/gan_systems?w=5













Media Contact:













Laura Wood, Senior Manager
press@researchandmarkets.com  

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Cision View original content:http://www.prnewswire.com/news-releases/gan-systems-gs61004b-gan-hemt-complete-teardown-report-2018-with-comparison-of-standard-100v-si-mosfets-and-low-voltage-gan-on-si-hemt-300668404.html













SOURCE Research and Markets













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